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零件编号 | HAF2021S | ||
描述 | Silicon N-Channel MOSFET | ||
制造商 | Renesas | ||
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1 Page
HAF2021(L), HAF2021(S)
Silicon N Channel MOS FET Series
Power Switching
REJ03G0179-0200Z
(Previous ADE-208-1459A(Z))
Rev.2.00
Mar.05.2004
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in
over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc.
Features
• Logic level operation (6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
Outline
LDPAK
D
G Gate resistor
Temperature
Sensing Circuit
www.DataSheet4U.com
Latch
Circuit
Gate
Shut-down
Circuit
S
44
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00, Mar.05.2004, page 1 of 8
HAF2021(L), HAF2021(S)
Ordering Information
Part Name
Quantity
Shipping Container
HAF2021-90L
Max:50pcs/sack
sack
HAF2021-90S
Max:50pcs/sack
sack
HAF2021-90STL
1000pcs/Reel
Embossed tape
HAF2021-90STR
1000pcs/Reel
Embossed tape
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
www.DataSheet4U.com
Rev.2.00, Mar.05.2004, page 8 of 8
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页数 | 9 页 | ||
下载 | [ HAF2021S.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
HAF2021 | Silicon N Channel MOSFET Series Power Switching | Renesas Technology |
HAF2021L | Silicon N-Channel MOSFET | Renesas |
HAF2021S | Silicon N-Channel MOSFET | Renesas |
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