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PDF ( 数据手册 , 数据表 ) S-LP3407LT1G

零件编号 S-LP3407LT1G
描述 P-Channel Enhancement-Mode MOSFET
制造商 LRC
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S-LP3407LT1G 数据手册, 描述, 功能
LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
VDS
I D (V GS = -10V)
RDS(ON) (VGS = -10V)
RDS(ON) (VGS = -4.5V)
-30V
-4.1A
< 70m
< 100m
FEATURES
The LP3407LT1G uses advanced trench technology to provide
excellent RDS(ON) with low gate charge. This device is
suitable for use as a load switch or in PWM applications.
S- Prefix for Automotive and Other Applications Req uiring Uniq ue
Site and Control Change Req uirements; AEC-Q101 Qualified and
PPAP Capable.
ORDERING INFORMATION
Device
LP3407LT1G
S-LP3407LT1G
LP3407LT3G
S-LP3407LT3G
Marking
A07
A07
Shipping
3000/Tape&Reel
10000/Tape&Reel
LP3407LT1G
S-LP3407LT1G
3
1
2
SOT– 23 (TO–236AB)
D
G
S
MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current
TA=70°C
Pulsed Drain Current C
TA=25°C
Power Dissipation B TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ, TSTG
Maximum
-30
±20
-4.1
-3.5
-25
1.4
0.9
-55 to 150
Units
V
V
A
W
°C
THERMAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
Units
90 °C/W
125 °C/W
80 °C/W
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
Rev .O 1/6












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