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零件编号 | XP151A11B0MR-G | ||
描述 | Power MOSFET ( Transistor ) | ||
制造商 | Torex Semiconductor | ||
LOGO | |||
1 Page
XP151A11B0MR-G
Power MOSFET
ETR1117_003
■GENERAL DESCRIPTION
The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■FEATURES
Low On-State Resistance : Rds(on) = 0.12Ω@ Vgs = 10V
: Rds(on) = 0.17Ω@ Vgs = 4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 4.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free
■PIN CONFIGURATION/
MARKING
11 1 x
G:Gate
S:Source
D:Drain
* x represents production lot number.
■EQUIVALENT CIRCUIT
■PRODUCT NAMES
PRODUCTS
PACKAGE
ORDER UNIT
XP151A11B0MR
SOT-23
3,000/Reel
XP151A11B0MR-G(*)
SOT-23
3,000/Reel
(*) The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.
■ABSOLUTE MAXIMUM RATINGS
Ta = 25℃
PARAMETER
SYMBOL RATINGS UNITS
Drain - Source Voltage Vdss
Gate - Source Voltage Vgss
Drain Current (DC)
Id
Drain Current (Pulse)
Idp
Reverse Drain Current
Idr
Channel Power Dissipation * Pd
Channel Temperature
Tch
Storage Temperature
Tstg
30
±20
1
4
1
0.5
150
-55~150
V
V
A
A
A
W
℃
℃
* When implemented on a ceramic PCB
1/5
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页数 | 5 页 | ||
下载 | [ XP151A11B0MR-G.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
XP151A11B0MR-G | Power MOSFET ( Transistor ) | Torex Semiconductor |
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