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零件编号 | KI2301T | ||
描述 | P-Channel MOSFET | ||
制造商 | Kexin | ||
LOGO | |||
1 Page
SMD Type
MOSFET
P-Channel Enhancement MOSFET
KI2301T
■ Features
● VDS (V) =-12V
● ID =-2.8 A
● RDS(ON) < 115mΩ (VGS =-4.5V)
● RDS(ON) < 160mΩ (VGS =-2.5V)
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Junction Temperature
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
PD
TJ
Tstg
Rating
-12
±10
-2.8
1.2
150
-55 to 150
Unit
V
A
W
℃
1.Gate
2.Source
3.Drain
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(On)
Test Conditions
ID=-250μA, VGS=0V
VDS=-12V, VGS=0V,Tj = 25℃
VDS=0V, VGS=±10V
VDS=VGS ID=-250μA
VGS=-4.5V, ID=-1A
VGS=-2.5V, ID=-0.5A
Min Typ Max Unit
-12 -18
V
1 μA
±100 nA
-0.45
-1.1 V
115 mΩ
160
■ Marking
Marking
A19T
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页数 | 1 页 | ||
下载 | [ KI2301T.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
KI2301T | P-Channel MOSFET | Kexin |
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