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PDF ( 数据手册 , 数据表 ) AO4310

零件编号 AO4310
描述 N-Channel MOSFET
制造商 Alpha & Omega Semiconductors
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AO4310 数据手册, 描述, 功能
AO4310
36V N-Channel MOSFET
General Description
The AO4310 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
36V
27A
< 3.1m
< 4.2m
Top View
D
D
D
D
SOIC-8
Bottom View
D
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
TA=25°C
Power Dissipation B TA=70°C
VGS
ID
IDM
IAS, IAR
EAS, EAR
PD
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum
36
±20
27
22
390
67
224
3.6
2.3
-55 to 150
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
27
52
10
Max
35
65
15
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: February 2011
www.aosmd.com
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