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PDF ( 数据手册 , 数据表 ) RU1H130Q

零件编号 RU1H130Q
描述 N-Channel Advanced Power MOSFET
制造商 Ruichips
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RU1H130Q 数据手册, 描述, 功能
RU1H130Q
N-Channel Advanced Power MOSFET
Features
•100V/130A,
RDS (ON) =7mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• High Efficiency Synchronous Rectification in SMPS
• High Speed Power Switching
Pin Description
G
D
S
TO247
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
100
±25
175
-55 to 175
130
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
520 A
130
A
92
312
W
156
0.48 °C/W
50 °C/W
552 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2013
1
www.ruichips.com







RU1H130Q pdf, 数据表
Customer Service
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Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
RU1H130Q
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2013
8
www.ruichips.com














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