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零件编号 | RU1H130Q | ||
描述 | N-Channel Advanced Power MOSFET | ||
制造商 | Ruichips | ||
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1 Page
RU1H130Q
N-Channel Advanced Power MOSFET
Features
•100V/130A,
RDS (ON) =7mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• High Efficiency Synchronous Rectification in SMPS
• High Speed Power Switching
Pin Description
G
D
S
TO247
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
100
±25
175
-55 to 175
130
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
520 A
130
A
92
312
W
156
0.48 °C/W
50 °C/W
552 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2013
1
www.ruichips.com
Customer Service
Worldwide Sales and Service:
Technical Support:
Investor Relations Contacts:
Marcom Contact:
Editorial Contact:
HR Contact:
Legal Contact:
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
RU1H130Q
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2013
8
www.ruichips.com
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页数 | 8 页 | ||
下载 | [ RU1H130Q.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
RU1H130Q | N-Channel Advanced Power MOSFET | Ruichips |
RU1H130R | N-Channel Advanced Power MOSFET | Ruichips |
RU1H130S | N-Channel Advanced Power MOSFET | Ruichips |
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