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PDF ( 数据手册 , 数据表 ) T70RIA120

零件编号 T70RIA120
描述 MEDIUM POWER PHASE CONTROL THYRISTORS
制造商 International Rectifier
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T70RIA120 数据手册, 描述, 功能
Bulletin I27105 rev. B 02/02
T..RIA SERIES
MEDIUM POWER PHASE CONTROL THYRISTORS
Features
Electrically isolated base plate
Types up to 1200 VRRM
3500 VRMS isolating voltage
Simplified mechanical designs,
rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
Power Modules
50 A
70 A
90 A
Description
These series of T-modules are inteded for general
purpose applications such as battery chargers,
welders and plating equipment, regulated power
supplies and temperature and speed control circuits.
The semiconductors are electrically isolated from the
metal base, allowing common heatsinks and compact
assemblies to be built.
Major Ratings and Characteristics
Parameters T50RIA T70RIA T90RIA Units
IT(AV)
@ TC
IT(RMS)
ITSM @50Hz
@ 60Hz
50
70
80
1310
1370
70
70
110
1660
1740
90
70
141
1780
1870
A
oC
A
A
A
I2t @ 50Hz 8550
13860 15900 A2s
@60Hz 7800
12650 14500
I2t 85500 138500 159100
VDRM/VRRM
100 to 1200
TJ -40 to 125
A2s
A2s
V
oC
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T70RIA120 pdf, 数据表
T..RIA Series
Bulletin I27105 rev. B 02/02
1500
1400
1300
1200
At Any R ated L oad Condition And W ith
R ated VR R M Applied F ollowing S urge.
Initial T J = 125 C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1100
1000
900
800 T 70R IA.. S eries
700
1
10 100
Number Of E qual Amplitude H alf Cycle Current P uls es (N)
Fig. 16 - Maximum Non-Repetitive Surge Current
1000
1700
1600
1500
1400
1300
Maximum Non R epetitive S urge Current
Vers us P uls e T rain Duration. Control
Of Conduction May Not B e Maintained.
Initial T J = 125 C
No Voltage R eapplied
R ated VR R MR eapplied
1200
1100
1000
900
800
T 70R IA.. S eries
700
600
0.01
0.1
1
P uls e T rain Duration (s )
Fig. 17 - Maximum Non-Repetitive Surge Current
100
T J= 25 C
10 T J= 125 C
T 70R IA.. S eries
1
0 0.5 1 1.5 2 2.5 3 3.5 4
Ins tantaneous On-s tate Voltage (V)
Fig. 10 - On-state Voltage Drop Characteristics
100
R ectangular gate puls e
a) R ecommended load line for
rated di/dt : 20V, 20ohms ;
tr=0.5 s , tp>=6 s
b) R ecommended load line for
10 <=30 % rated di/dt : 15V, 40ohms
tr=1 s , tp>=6 s
(b)
(a)
(1) P GM = 12W, tp = 5ms
(2) P GM = 30W, tp = 2ms
(3) P GM = 60W, tp = 1ms
(4) P GM = 200W, tp = 300 s
1
VGD
0.1
0 .0 0 1
IGD
0.01
(1) (2) (3) (4)
T 70R IA.., T 90R IA.. S eries F requency L imited by P G(AV)
0.1 1
10 100 1000
Ins tantaneous Gate Current (A)
Fig. 19 - Gate Characteristics
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