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PDF ( 数据手册 , 数据表 ) XD1001-BD

零件编号 XD1001-BD
描述 Distributed Amplifier
制造商 MA-COM
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XD1001-BD 数据手册, 描述, 功能
XD1001-BD
Distributed Amplifier
18-50 GHz
Features
Ultra Wide Band Driver Amplifier
Fiber Optic Modulator Driver
17.0 dB Small Signal Gain
5.0 dB Noise Figure
30 dB Gain Control
+15.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power
Testing
100% Visual Inspection to MIL-STD-883 Method
2010
RoHS* Compliant and 260°C Reflow Compatible
Description
M/A-COM Tech’s 18.0-50.0 GHz GaAs MMIC
distributed amplifier has a small signal gain of 17.0
dB with a noise figure of 5.0 dB across the band.
The device also includes 30.0 dB gain control and a
+15 dBm P1dB compression point. This MMIC uses
M/A-COM Tech’s GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to
protect and provide a rugged part with backside via
holes and gold metallization to allow either a
conductive epoxy or eutectic solder die attach
process. This device is well suited for microwave,
millimeter-wave and wideband military applications.
Ordering Information
Part Number
Package
XD1001-BD-000V
V” - vacuum release gel
paks
XD1001-BD-EV1
evaluation module
Chip Device Layout
Rev. V1
Absolute Maximum Ratings
Parameter
Absolute Max.
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)1
+6.0 VDC
220 mA
+0.3 V
+15 dBm
-65 ºC to +165 ºC
-55 ºC to +85 ºC
+175 ºC
(1) Channel temperature affects a device's MTTF. It is recommended to
keep channel temperature as low as possible for maximum life.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
India Tel: +91.80.43537383
China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.







XD1001-BD pdf, 数据表
XD1001-BD
Distributed Amplifier
18-50 GHz
Rev. V1
App Note [1] Biasing - As shown in the bonding diagram,
this device is operated with a single drain and a gain con-
trol voltage. Maximum gain bias is nominally Vd=5.0V,
Vg=0V, Id=160mA. Gain can be adjusted by changing Vg.
It is recommended to use active biasing to keep the cur-
rents constant as the RF power and temperature vary; this
gives the most reproducible results. Depending on the sup-
ply voltage available and the power dissipation constraints,
the bias circuit may be a single transistor or a low power
operational amplifier, with a low value resistor in series with
the drain supply used to sense the current. The gate of the
pHEMT is controlled to maintain correct drain current and
thus drain voltage. The typical gate voltage needed to do
this is 0.0V. Typically the gate is protected with Silicon di-
odes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias
is available before applying the positive drain supply.
App Note [2] Bias Arrangement - Each DC pad (Vd and Vg) needs to have DC bypass capacitance (~100-200
pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
class 2 devices.
8
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
India Tel: +91.80.43537383
China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.














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