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零件编号 | KTD1898 | ||
描述 | NPN Transistor | ||
制造商 | WEJ | ||
LOGO | |||
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RoHS
KTD1898
KTD1898 TRANSISTOR (NPN)
DFEATURES
Power dissipation
TPCM: 500 mW (Tamb=25℃)
.,LCollector current
ICM:
Collector-base voltage
1A
OV(BR)CBO:
100 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage
RCollector cut-off current
TEmitter cut-off current
CDC current gain
Collector-emitter saturation voltage
ETransition frequency
LCollector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=80V, IE=0
VEB=4V, IC=0
VCE=3V, IC=500mA
IC=500mA, IB=20mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
100 V
80 V
5V
1 µA
1 µA
70 400
0.4 V
100 MHz
20 pF
ECLASSIFICATION OF hFE(1)
JRank
ERange
WMarking
O
70-140
ZO
Y
120-240
ZY
GR
200-400
ZG
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页数 | 1 页 | ||
下载 | [ KTD1898.PDF 数据手册 ] |
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