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零件编号 | D882 | ||
描述 | NPN Transistor | ||
制造商 | WEJ | ||
LOGO | |||
1 Page
RoHS
D882
D882 TRANSISTOR (NPN)
DFEATURES
Power dissipation
TPCM: 500 mW (Tamb=25℃)
.,LCollector current
ICM: 3
Collector-base voltage
A
OV(BR)CBO:
40 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage
OCollector-emitter breakdown voltage
Emitter-base breakdown voltage
RCollector cut-off current
TCollector cut-off current
CEmitter cut-off current
EDC current gain
ELCollector-emitter saturation voltage
Base-emitter saturation voltage
JTransition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE (sat)
VBE (sat)
fT
Test conditions
Ic= 100µA, IE=0
Ic= 10 mA, IB=0
IE= 100µA, IC=0
VCB= 40 V, IE=0
VCE= 30 V, IB=0
VEB= 6 V, IC=0
VCE= 2 V, IC= 1A
VCE= 2 V, IC= 100mA
IC= 2A, IB= 0.2 A
IC= 2A, IB= 0.2 A
VCE= 5V, Ic=0.1A
f =10MHz
MIN
40
30
6
60
32
50
TYP
MAX
1
10
1
400
UNIT
V
V
V
µA
µA
µA
0.5 V
1.5 V
MHz
WECLASSIFICATION OF hFE (1)
Rank
R
O
Y GR
Range
60-120
100-200
160-320
200-400
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页数 | 1 页 | ||
下载 | [ D882.PDF 数据手册 ] |
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