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零件编号 | ACE2010M | ||
描述 | P-Channel MOSFET | ||
制造商 | ACE Technology | ||
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1 Page
ACE2010M
P-Channel -100V MOSFET
Description
The ACE2010 miniature surface mount MOSFETs utilize a high cell density trench process to provide
low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
converters and power management in portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
Features
• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe DPAK saves board space
• Fast switching speed
• High performance trench technology
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current b
TC=25°C
Continuous Source Current (Diode Conduction) a
Power Dissipation
TC=25°C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
-100
±20
11
±40
-15
50
-55 to 175
Unit
V
A
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
Symbol Maximum Unit
RθJA
RθJC
50
°C/W
3.0
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
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页数 | 5 页 | ||
下载 | [ ACE2010M.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
ACE2010M | P-Channel MOSFET | ACE Technology |
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