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PDF ( 数据手册 , 数据表 ) ACE2010M

零件编号 ACE2010M
描述 P-Channel MOSFET
制造商 ACE Technology
LOGO ACE Technology LOGO 


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ACE2010M 数据手册, 描述, 功能
ACE2010M
P-Channel -100V MOSFET
Description
The ACE2010 miniature surface mount MOSFETs utilize a high cell density trench process to provide
low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
converters and power management in portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
Features
Low rDS(on) provides higher efficiency and extends battery life
Low thermal impedance copper leadframe DPAK saves board space
Fast switching speed
High performance trench technology
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current b
TC=25°C
Continuous Source Current (Diode Conduction) a
Power Dissipation
TC=25°C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
-100
±20
11
±40
-15
50
-55 to 175
Unit
V
A
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
Symbol Maximum Unit
RθJA
RθJC
50
°C/W
3.0
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1












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