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PDF ( 数据手册 , 数据表 ) 2W04G

零件编号 2W04G
描述 Glass Passivated Single-Phase Bridge Rectifier
制造商 Vishay
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2W04G 数据手册, 描述, 功能
2W005G, 2W01G, 2W02G, 2W04G, 2W06G, 2W08G, 2W10G
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
+~
+~
~−
~−
Case Style WOG
PRIMARY CHARACTERISTICS
Package
WOG
IF(AV)
VRRM
2.0 A
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM
IR
VF at IF = 2.0 A
TJ max.
Diode variations
60 A
5 μA
1.1 V
150 °C
Quad
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Typical IR less than 0.5 μA
• High case dielectric strength
e4
• High surge current capability
• Solder dip 260 °C, 40 s
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, adapter, charger, lighting ballaster on
consumers, and home appliances applications.
MECHANICAL DATA
Case: WOG
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL 2W005G 2W01G 2W02G 2W04G 2W06G 2W08G 2W10G UNIT
Maximum repetitive peak reverse voltage
VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage
VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified current at
0.375" (9.5 mm) lead length at (fig. 1)
IF(AV)
2.0 A
Peak forward surge current single half sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
IFSM
I2t
60 A
15 A2s
Operating junction and storage temperature range TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL 2W005G 2W01G 2W02G 2W04G 2W06G 2W08G 2W10G UNIT
Maximum instantaneous
forward voltage drop per
diode
IF = 2.0 A
VF
1.1 V
Maximum DC reverse
current at rated DC blocking
voltage per diode
TA = 25 °C
TA = 125 °C
IR
5.0
μA
500
Typical junction capacitance
per diode
4.0 V, 1 MHz
CJ
40
20 pF
Revision: 08-Jul-13
1 Document Number: 88528
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000












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