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零件编号 | KDV153 | ||
描述 | SILICON EPITAXIAL PLANAR DIODE | ||
制造商 | KEC | ||
LOGO | |||
1 Page
SEMICONDUCTOR
TECHNICAL DATA
TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
20
150
-55 150
UNIT
V
KDV153
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. NC
2. ANODE
3. CATHODE
3
21
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
VR
IR
C2V
C10V
C2V/C10V
Series Resistance
rS
TEST CONDITION
IR=1 A
VR=20V
VR=2V, f=1MHz
VR=10V, f=1MHz
VR=5V, f=470MHz
MIN.
20
-
14.16
4.5
2.5
-
TYP.
-
-
-
-
-
MAX.
10
16.25
6.0
-
0.6
UNIT
V
nA
pF
pF
CLASSIPICATION OF CAPACITANCE GRADE
GRADE
CAPACITANCE (C2V)
UNIT
A 14.16 15.00
B 14.50 15.40
pF
C 14.90 15.90
D 15.40 16.25
2002. 6. 25
Revision No : 2
1/1
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页数 | 1 页 | ||
下载 | [ KDV153.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
KDV152 | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB/C/P PLL) | KEC(Korea Electronics) |
KDV152M | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB/C/P PLL) | KEC(Korea Electronics) |
KDV153 | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV VHF/UHF TUNER AFC VCO FOR UHF BAND RADIO) | KEC(Korea Electronics) |
KDV153 | SILICON EPITAXIAL PLANAR DIODE | KEC |
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