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PDF ( 数据手册 , 数据表 ) RJF0614DSP

零件编号 RJF0614DSP
描述 Silicon N Channel Thermal FET
制造商 Renesas
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RJF0614DSP 数据手册, 描述, 功能
Target Specifications Datasheet
RJF0614DSP
60V, 1.5A N Channel Thermal FET
Power Switching
R07DS1127EJ0100
Rev.1.00
Nov 27, 2013
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (5 to 6 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Temperature hysteresis type.
High density mounting
Power supply voltage applies 12 V and 24 V.
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
8765
1234
2
G
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
Gate Resistor
Current
Limitation
Circuit
Temperature Self Gate
Sensing
Return Shut-down
Circuit
Circuit Circuit
MOS1
DD
78
4 Current
G
Gate Resistor
Limitation
Circuit
Temperature Self Gate
Sensing
Return Shut-down
Circuit
Circuit Circuit
1
S MOS2
DD
56
3
S
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
60
Gate to source voltage
VGSS
16
Gate to source voltage
Drain current
VGSS
ID Note4
–2.5
1.5
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
IDR
IAP Note 3
EAR Note 3
Pch Note 1
Pch Note 2
1.5
0.9
69.4
2
3
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW 10 s
2. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW 10 s
3. Tch = 25°C, Rg 50 Ω, L = 100 mH
4. It provides by the current limitation lower bound value.
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
W
°C
°C
R07DS1127EJ0100 Rev.1.00
Nov 27, 2013
Page 1 of 7







RJF0614DSP pdf, 数据表
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