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PDF ( 数据手册 , 数据表 ) SXA-389Z

零件编号 SXA-389Z
描述 MEDIUM POWER GaAs HBT AMPLIFIER
制造商 RF Micro Devices
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SXA-389Z 数据手册, 描述, 功能
SXA-389(Z)
400MHz to
2500 MHz
¼W Medium
Power GaAs
HBT Amplifier
with Active
Bias
SXA-389(Z)
400MHz to 2500MHz ¼W MEDIUM POWER
GaAs HBT AMPLIFIER WITH ACTIVE BIAS
Package: SOT-89
Product Description
RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipo-
lar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent performance
from wafer to wafer and lot to lot. These amplifiers are specially designed
for use as driver devices for infrastructure equipment in the 400MHz
to2500MHz cellular, ISM, WLL, PCS, W-CDMA applications.
Optimum Technology
Matching® Applied
9 GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Typical IP3, P1dB, Gain
50
45 OIP3
P1dB
40 Gain
35
30
25
20
15
10
5
0
850 MHz
1960 MHz
2140 MHz
2450 MHz
Features
„ Available in RFMD Green, RoHS
Compliant, and Pb-Free (Z Part
Number)
„ On-Chip Active Bias Control, Sin-
gle 5V Supply
„ High Output 3rd Order
Intercept:+42to+44dBm Typ.
„ High P1dB :+25dBm Typ.
„ High Gain:+19dB at 850MHz
„ High Efficiency: Consumes Only
600 mW
„ Patented High Reliability GaAs
HBT Technology
„ Surface-Mountable Power Plastic
Package
Applications
„ W-CDMA, PCS, Cellular Systems
„ High Linearity IF Amplifiers
„ Multi-Carrier Applications
Parameter
Small Signal Gain
Output Power at 1dB Compression
Output Third Order Intercept Point
Noise Figure
Input VSWR
Device Operating Current
Operating Dissipated Power
Thermal Resistance
Test Conditions: Z0=50Ω, TA=25°C
Min.
12.5
24.0
39.0
90.0
Specification
Typ.
19.0
14.0
13.5
13.0
25.0
25.0
25.0
25.0
43.0
44.0
42.0
42.0
4.7
5.5
6.0
6.0
1.3:1
1.4:1
1.3:1
1.1:1
115.0
575.0
100
Max.
15.0
122.0
610.0
Unit
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
mA
mW
°C/W
850 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
VCC = 5 V
Condition
junction to backside
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-102231 Rev F
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 10







SXA-389Z pdf, 数据表
SXA-389(Z)
Application Schematic
R F in
C4
Z=50 Ω , EL1 °
Z=50 Ω , EL2 °
L2
C5
Vcc
C1
C2
C3
L1
Z=50 Ω , EL3 °
C7
RFout
C6
Ref. Des.
C1
C2
C3, C7
C4
C5
C6
Vendor
Series
850
MHz
1960
MHz
2140
MHz
2450
MHz
Matsuo
267M3502104K
0.1uF
10%
0.1uF
10%
0.1uF
10%
0.1uF
10%
Rohm MCH18
1000pF 1000pF 1000pF 1000pF
5% 5% 5%
5%
Rohm MCH18
47pF
5%
22pF
5%
22pF
5%
22pF
5%
Rohm MCH18
47pF
5%
22pF
5%
22pF
5%
1.2pF
±0.25pF
Rohm MCH18
3.9pF
±0.25pF
-
-
-
Rohm MCH18
3.9pF
0.5pF
0.5pF
0.5pF
±0.25pF ±0.25pF ±0.25pF ±0.25pF
Ref. Des.
Vendor
Series
850
MHz
1960
MHz
C6 Position
21
L1
Toko LL1608-FS
33nH
5%
18nH
5%
L2
Toko LL1608-FS
1.2nH
±0.3nH
thru
EL1 9.7 -
2140
MHz
1
18nH
5%
thru
-
2450
MHz
1
15nH
5%
thru
-
EL2 5.6 - - -
EL3 13.2 28.7 31.4 35.9
Evaluation Board Layout
8 of 10
RFin
C4 L2
C5
C1
C2
C3
L1
12
C6
RFout
C7
SIRENZA MICRODEVICES
SOT-89 Eval Board
ECB-101499 Rev B
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
EDS-102231 Rev F














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