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PDF ( 数据手册 , 数据表 ) SPA2318Z

零件编号 SPA2318Z
描述 POWER AMPLIFIER
制造商 RF Micro Devices
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SPA2318Z 数据手册, 描述, 功能
SPA2318ZLow
Noise, High
Gain SiGe HBT
SPA2318Z
1700MHz to 2200MHz 1 WATT POWER AMP
WITH ACTIVE BIAS
Package: Exposed Pad SOIC-8
Product Description
RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)
amplifier housed in a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial growth technology which
produces reliable and consistent performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver amplifier for infrastructure
equipment in the 1960MHz and 2140MHz bands. Its high linearity makes it an
ideal choice for multi-carrier and digital applications. The matte tin finish on the
lead-free package utilizes a post annealing process to mitigate tin whisker forma-
Optimum Technology
Matching® Applied
GaAs HBT
tion and is RoHS compliant per EU Directive 2002/95. This
package is also manufactured with green molding compounds
that contain no antimony trioxide or halogenated fire retar-
dants.
GaAs MESFET
InGaP HBT
SiGe BiCMOS
VC1
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
VBIAS
RFIN
Active
Bias
RFOUT/
VC2
Si BJT
GaN HEMT
RF MEMS
VPC2
Features
High Linearity Performance:
+21dBm IS-95 Channel
Power at -55dBc ACP;
+20.7dBm WCDMA Channel
Power at -50dBc ACP;
+47dBm Typ. OIP3
On-Chip Active Bias Control
High Gain: 24dB Typ. at
1960 MHz
Patented High Reliability
GaAs HBT Technology
Surface-Mountable Plastic
Package
Applications
WCDMA Systems
PCS Systems
Multi-Carrier Applications
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Frequency of Operation
1700
2200
MHz
Output Power at 1dB Compression [1]
29.5
dBm
1960 MHz
29.5
dBm
2140 MHz
Adjacent Channel Power [1]
-55.0
-50.0
-47.0
dBc 1960MHz, IS-95 at POUT=21.0dBm, WCDMA at
POUT = 20.7 dBm
dBc 2140MHz
Small Signal Gain [1,2]
24.0
dB 1960MHz
21.0
23.5
24.5 dB 2140MHz
Input VSWR [1,2]
1.6:1
1960 MHz
1.6:1
2140 MHz
Output Third Order Intercept Point [2]
46.5
dBm
1960MHz, Power out per tone=+14dBm
47.0
dBm
2140 MHz
Noise Figure [1,2]
5.5 dB 1960MHz
5.5 dB 2140MHz
Device Current [1,2]
360 400 425 mA IBIAS=10mA, IC1=70mA, IC2=320mA
Device Voltage [1,2]
4.75
5.0
5.25
V
Thermal Resistance
(Junction - Lead)
31
°C/W
TL = 85°C
Test Conditions: Z0=50Temp=25°C VCC=5.0V [1] Optimal ACP tune [2] Optimal IP3 tune
DS121024
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
(+1) 336-678-5570 [email protected]
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SPA2318Z pdf, 数据表
SPA2318Z
Branding Diagram
Recommended Land Pattern
0.150 [3.81]
Plated-Thru Holes
(0.015" Dia, 0.030" Pitch)
Machine
Screws
0.140 [3.56]
0.300 [7.62]
0.080 [2.03]
0.050 [1.27]
0.020 [0.51]
Ordering Information
Ordering Code
SPA2318Z
SPA2318ZSQ
SPA2318ZSR
SPA2318Z-EVB1
SPA2318Z-EVB2
Description
7” Reel with 500 pieces
Sample bag with 25 pieces
7” Reel with 100 pieces
1960MHz PCBA
2140MHz PCBA
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS121024














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