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零件编号 | SMUN5214DW | ||
描述 | NPN Multi-Chip Built-in Resistors Transistor | ||
制造商 | SeCoS | ||
LOGO | |||
1 Page
Elektronische Bauelemente
SMUN52XXDW
NPN Multi-Chip
Built-in Resistors Transistor
The BRT (Bias Resistor Transistor) contains a single transistor
with a monolithic bias network consisting of two resistors; a series
base resistor and a base–emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them
into a single device. In the SMUN5211DW series, two BRT devices are
housed in the SOT–363 package which is ideal for low power surface
mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb-Free Package is available
6 54
Q2 R1 R2
R2
R1
Q1
12
3
MARKING DIAGRAM
6 54
7X
1 23
7X = Device Marking
.055(1.40)
.047(1.20)
SOT-363
.026TYP
(0.65TYP)
.021REF
(0.525)REF
8o
0o
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V CBO
V CEO
IC
Value
50
50
100
Unit
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Total Device Dissipation T A = 25°C
Derate above 25°C
Thermal Resistance – Junction-to-Ambient
Characteristic (Both Junctions Heated)
Total Device Dissipation T A = 25°C
Derate above 25°C
Thermal Resistance – Junction-to-Ambient
Thermal Resistance – Junction-to-Lead
Junction and Storage Temperature
Symbol
PD
R JA
Symbol
PD
R θJA
R θJL
T J , T stg
Max
Note 1 Note 2
187 256
1.5 2.0
670 490
Max
Note 1
Note 2
250 385
2.0 3.0
493 325
188 208
–55 to +150
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C/W
°C
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
http://www.SeCoSGmbH.com
22-Jun-2007 Rev. A
Any changing of specification will not be informed individual
Page 1 of 8
Elektronische Bauelemente
SMUN52XXDW
NPN Multi-Chip
Built-in Resistors Transistor
TYPICAL ELECTRICAL CHARACTERISTICS – SMUN5214DW
1
0.1
0.01
0.001
0
20 40 60
I C , COLLECTOR CURRENT (mA)
Figure 17. V CE(sat) versus I C
80
4
3.5
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 15 20 25 30 35 40 45 50
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 19. Output Capacitance
10
300
250
200
150
100
50
0
1 2 3 4 5 10 15 20 40 50 60 70 80 90 100
I C , COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
100
10
1
0
12
34
56
78
9 10
V in , INPUT VOLTAGE (VOLTS)
Figure 20. Output Current versus Input oltage
1
http://www.SeCoSGmbH.com
22-Jun-2007 Rev. A
0.1
0
10 20 30 40 50
I ,COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
Any changing of specification will not be informed individual
Page 8 of 8
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页数 | 8 页 | ||
下载 | [ SMUN5214DW.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
SMUN5214DW | NPN Multi-Chip Built-in Resistors Transistor | SeCoS |
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