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PDF ( 数据手册 , 数据表 ) UPD5741T6J

零件编号 UPD5741T6J
描述 LOW NOISE AND HIGH GAIN AMPLIFIER
制造商 Renesas
LOGO Renesas LOGO 


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UPD5741T6J 数据手册, 描述, 功能
DATA SHEET
MOS ANALOG INTEGRATED CIRCUIT
μPD5741T6J
LOW NOISE AND HIGH GAIN AMPLIFIER
FOR IMPEDANCE CONVERTER OF MICROPHONE
DESCRIPTION
The μPD5741T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for
electret condenser microphone. This device exhibits low noise and high voltage gain characteristics.
The package is 3-pin thin-type lead-less minimold, suitable for surface mount.
FEATURES
• Low Noise
: NV = 101 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ
: NV = 102 dBV TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ
• High Gain
: GV = +6.5 dB TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ
: GV = +8.5 dB TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ
• Low Consumption Current : IDD = 250 μA TYP. @ VDD = 2 V, RL = 2.2 kΩ
• Built-in the capacitor for RF noise immunity
• High ESD voltage
• 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm)
APPLICATIONS
• Microphone, Sensor, etc.
ORDERING INFORMATION
Part Number
Order Number
Package
μPD5741T6J-E4
μPD5741T6J-E4-A
3-pin thin-type lead-
less minimold
(Pb-Free)
Marking
Supplying Form
6T Embossed tape 8 mm wide
Pin 3 (GND) face the perforation side of the tape
Qty 10 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: μPD5741T6J
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10729EJ01V0DS (1st edition)
Date Published September 2008 NS
Printed in Japan
2008












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