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PDF ( 数据手册 , 数据表 ) ACE3926E

零件编号 ACE3926E
描述 DUAL N-Channel MOSFET
制造商 ACE Technology
LOGO ACE Technology LOGO 


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ACE3926E 数据手册, 描述, 功能
ACE3926E
Dual N-Channel 20-V MOSFET
Description
The ACE3926E utilize a high cell density trench process to provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
Features
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications
Power Routing
Li Ion Battery Packs
Level Shifting and Driver Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
TA=25
TA=70
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25
TA=70
Operating temperature / storage temperature
Symbol Limit Units
VDS 20 V
VGS ±12 V
13
ID
A
10
IDM 50 A
IS 7 A
2.5
PD
W
1.5
TJ/TSTG -55~150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
83
120
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1












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