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零件编号 | ACE3926E | ||
描述 | DUAL N-Channel MOSFET | ||
制造商 | ACE Technology | ||
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ACE3926E
Dual N-Channel 20-V MOSFET
Description
The ACE3926E utilize a high cell density trench process to provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications
• Power Routing
• Li Ion Battery Packs
• Level Shifting and Driver Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
TA=25℃
TA=70℃
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25℃
TA=70℃
Operating temperature / storage temperature
Symbol Limit Units
VDS 20 V
VGS ±12 V
13
ID
A
10
IDM 50 A
IS 7 A
2.5
PD
W
1.5
TJ/TSTG -55~150 ℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
83
120
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
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页数 | 7 页 | ||
下载 | [ ACE3926E.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
ACE3926E | DUAL N-Channel MOSFET | ACE Technology |
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