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零件编号 | ACE2600B | ||
描述 | Dual N-Channel Enhancement Mode Field Effect Transistor | ||
制造商 | ACE Technology | ||
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ACE2600B
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Description
The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. It is ESD
protected.
Features
VDS(V)=20V
ID=6A (VGS=4.5V)
RDS(ON)<22mΩ (VGS=4.5V)
RDS(ON)<26mΩ (VGS=2.5V)
RDS(ON)<34mΩ (VGS=1.8V)
ESD Protected: 2000V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) * AC TA=25 OC
TA=70 OC
VDSS
VGSS
ID
20 V
±8 V
6
4.8 A
Drain Current (Pulse) * B
IDM 30
Power Dissipation
TA=25 OC
TA=70 OC
PD
1.3
W
0.8
Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC
Packaging Type
SOT-23-6L
VER 1.2 1
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页数 | 6 页 | ||
下载 | [ ACE2600B.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
ACE2600B | Dual N-Channel Enhancement Mode Field Effect Transistor | ACE Technology |
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