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零件编号 | D40C4 | ||
描述 | NPN SILICON DARLINGTON POWER TRANSISTOR | ||
制造商 | Central Semiconductor | ||
LOGO | |||
1 Page
D40C4
NPN SILICON
DARLINGTON POWER
TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR D40C4 type is an
NPN silicon Darlington power transistor designed for
general purpose amplifier applications where high gain
is required.
MARKING: FULL PART NUMBER
TO-202 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCES
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
ΘJC
40
40
13
0.5
1.0
6.25
-55 to +150
20
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
ICES
VCE=40V
ICBO
VCE=40V, TC=150°C
IEBO
VEB=13V
BVCEO
lC=10mA
40
VCE(SAT)
lC=500mA, IB=0.5mA
VBE(SAT)
lC=500mA, IB=0.5mA
hFE VCE=5.0V, IC=200mA
10K
fT VCE=5.0V, lC=20mA
80
Ccb VCB=10V, f=1.0MHz
ton lC=1.0A, IB1=1.0mA
120
toff lC=1.0A, IB1=IB2=1.0mA
1200
MAX
500
20
100
1.5
2.0
70K
10
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
nA
μA
nA
V
V
V
MHz
pF
ns
ns
R1 (23-January 2012)
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页数 | 2 页 | ||
下载 | [ D40C4.PDF 数据手册 ] |
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