DataSheet8.cn


PDF ( 数据手册 , 数据表 ) KDV251M

零件编号 KDV251M
描述 SILICON EPITAXIAL PLANAR DIODE
制造商 KEC
LOGO KEC LOGO 


1 Page

No Preview Available !

KDV251M 数据手册, 描述, 功能
SEMICONDUCTOR
TECHNICAL DATA
VCO FOR C/P, CB PLL
FEATURES
Low Series Resistance : 0.6 (Max.)
High Capacitance Ratio : 1.7(Min.) 2.2(Max.)
KDV251M/S
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
VR
Tj
Storage Temperature Range
Tstg
RATING
12
150
-55 150
UNIT
V
CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE
CAPACITANCE RATIO (C1.6V/C5V)
NONE
1.70 2.20
A 1.70 1.82
B 1.80 1.92
C 1.90 2.020
D 2.00 2.12
E 2.10 2.20
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
VR
IR
C1.6V
C5V
C1.6V/C5V
Series Resistance
rS
TEST CONDITION
IR=10 A
VR=9V
VR=1.6V, f=1MHz
VR=5V, f=1MHz
VR=1V, f=50MHz
2002. 6. 25
Revision No : 4
MIN.
12
-
23
11
1.7
-
TYP.
-
-
-
-
-
-
MAX.
-
200
38
19
2.2
0.6
UNIT
V
nA
pF
pF
1/2












页数 2 页
下载[ KDV251M.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
KDV251VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB/C/P PLL)KEC(Korea Electronics)
KEC(Korea Electronics)
KDV251MVARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB/C/P PLL)KEC(Korea Electronics)
KEC(Korea Electronics)
KDV251MSILICON EPITAXIAL PLANAR DIODEKEC
KEC
KDV251SSILICON EPITAXIAL PLANAR DIODEKEC
KEC

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap