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零件编号 | KDV258E | ||
描述 | SILICON EPITAXIAL PLANAR DIODE | ||
制造商 | KEC | ||
LOGO | |||
1 Page
SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
High Capacitance Ratio : C1V/C4V =2.0(Min.)
Low Series Resistance : rs=0.45 (Max.)
KDV258E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CE
1
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
VR
Tj
Storage Temperature Range
Tstg
RATING
15
150
-55 150
UNIT
V
2
D
1. ANODE
2. CATHODE
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60+_ 0.10
1.20+_ 0.10
0.80+_ 0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Reverse Current
IR
Capacitance
C1V
C4V
Capacitance Ratio
K
Series Resistance
rS
TEST CONDITION
IR=1 A
VR=10V
VR=1V, f=1MHz
VR=4V, f=1MHz
-
VR=1V, f=470MHz
MIN.
15
-
19.0
8.5
2.0
-
TYP.
-
-
-
-
-
-
MAX.
-
10
21.0
10.0
-
0.45
UNIT
V
nA
pF
Marking
Type Name
U6
2003. 3. 25
Revision No : 0
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页数 | 2 页 | ||
下载 | [ KDV258E.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
KDV258 | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND) | KEC(Korea Electronics) |
KDV258E | SILICON EPITAXIAL PLANAR DIODE | KEC |
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