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零件编号 | KDV300E | ||
描述 | SILICON EPITAXIAL PLANAR DIODE | ||
制造商 | KEC | ||
LOGO | |||
1 Page
SEMICONDUCTOR
TECHNICAL DATA
TV Tuning.
FEATURES
High Capacitance Ratio : C2V/C25V=14.5(Min.)
Low Series Resistance : rs=1.1 (Max.)
Small Package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
VR
Tj
Tstg
RATING
32
150
-55 150
UNIT
V
KDV300E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60+_ 0.10
1.20+_ 0.10
0.80+_ 0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
Marking
Type Name
VC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Reverse Current
Capacitance
IR1
IR2
C2V
C25V
VR=30V
VR=30V, Ta=60
VR=2V, f=1MHz
VR=25V, f=1MHz
Capacitance Ratio
C2V/C25V
-
Series Resistance
rS VR=5V, f=470MHz
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
0.02
C(Min.)
(VR=2~25V)
MIN.
-
-
39.5
2.60
14.5
-
TYP.
-
-
-
-
-
-
MAX.
10
100
47.4
3.03
-
1.1
UNIT
nA
pF
2004. 4. 20
Revision No : 0
1/2
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页数 | 2 页 | ||
下载 | [ KDV300E.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
KDV300E | SILICON EPITAXIAL PLANAR DIODE | KEC |
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