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零件编号 | KF1N60L | ||
描述 | N CHANNEL MOS FIELD EFFECT TRANSISTOR | ||
制造商 | KEC | ||
LOGO | |||
1 Page
SEMICONDUCTOR
TECHNICAL DATA
KF1N60L
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
VDSS= 600V, ID= 0.5A
RDS(ON)=10 (Max) @VGS = 10V
Qg(typ) = 4.0nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
TC=25
Drain Current TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
TC=25
Derate above 25
Ta=25
ID
IDP
EAS
EAR
dv/dt
PD
Maximum Junction Temperature
Tj
Storage Temperature Range
Thermal Characteristics
Tstg
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
RATING
600
30
0.5
0.31
2.0
45
1.3
4.5
5.4
0.043
1
150
-55 150
23
125
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
W
/W
/W
BD
P
DEPTH:0.2
C
Q
K
FF
HH
M EM
123
HL
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
C 0.60 MAX
D 2.50 MAX
E 1.15 MAX
F 1.27
S G 1.70 MAX
H 0.55 MAX
J 14.00+_ 0.50
K 0.35 MIN
L 0.75+_ 0.10
M4
N
HO
P
25
1.25
Φ1.50
Q 0.10 MAX
R 12.50 +_ 0.50
S 1.00
NN
1. GATE
2. DRAIN
3. SOURCE
TO-92L
PIN CONNECTION
D
G
S
2013. 1. 14
Revision No : 0
1/7
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页数 | 7 页 | ||
下载 | [ KF1N60L.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
KF1N60D | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KF1N60I | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KF1N60L | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
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