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零件编号 | C4004 | ||
描述 | NPN Transistor - 2SC4004 | ||
制造商 | Panasonic | ||
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1 Page
Power Transistors
2SC4004
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
900
900
800
7
2
1
0.3
30
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
10.0±0.2
5.5±0.2
4.2±0.2
2.7±0.2
φ3.1±0.1
5.08±0.5
1.7±0.2
1.05±0.1
0.8±0.1
2.54±0.3
1.3±0.2
+0.2
0.5–0.1
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(b)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VCB = 900V, IE = 0
VEB = 7V, IC = 0
50 µA
50 µA
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
800
V
Forward current transfer ratio
hFE1
hFE2
VCE = 5V, IC = 0.05A
VCE = 5V, IC = 0.5A
6
3
Collector to emitter saturation voltage VCE(sat)
IC = 0.2A, IB = 0.04A
1.5 V
Base to emitter saturation voltage VBE(sat)
IC = 0.2A, IB = 0.04A
1.0 V
Transition frequency
Turn-on time
Storage time
Fall time
fT VCE = 10V, IC = 0.05A, f = 1MHz
ton
IC = 0.2A, IB1 = 0.04A, IB2 = – 0.04A,
tstg
VCC = 250V
tf
4 MHz
1.0 µs
3.0 µs
1.0 µs
1
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页数 | 3 页 | ||
下载 | [ C4004.PDF 数据手册 ] |
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