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零件编号 | E50A2CPR | ||
描述 | STACK SILICON DIFFUSED DIODE | ||
制造商 | KEC | ||
LOGO | |||
1 Page
SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=50A.
Reverse Voltage : 200V(Min.)
POLARITY
E50A2CPS (+ Type)
E50A2CPR (- Type)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
IF(AV)
IFSM
Repetitive Peak Reverse Voltage
VRRM
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
50
500 (60Hz)
200
-40 200
-40 200
UNIT
A
A
V
E50A2CPS, E50A2CPR
STACK SILICON DIFFUSED DIODE
D F2
E
F1
A
DIM MILLIMETERS DIM MILLIMETERS
A Φ11.7+0.1/-0 F1
0.32
B 3.85+0/-0.2 F2
3.1
D Φ1.45+_ 0.1
G
0.5
E 1.55 L1 8.4 MAX
DIM TYPE POLARITY
L2 S
R
MILLIMETERS
17.5+0/-1.5
21.5+0/-1.5
H-PF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
VF
Reverse Voltage
VR
Reverse Current
IR
Transient Thermal Resistance
VF
Reverse Recovery Time
Reverse Leakage Current Under
High Temperature
trr
HIR
Temperature Resistance
Rth
TEST CONDITION
IFM=100A
IR=5mA
VR=200V
IFM=100A, IM=100mA,
Pw=100ms
IF=100mA, IRP=100mA
Ta=150 , VR=200V
Junction to Base
Junction to Fin
MIN.
-
200
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
MAX.
1.05
-
50
UNIT
V
V
A
130 mV
15 s
2.5 mA
0.8
/W
1.0
2005. 3. 7
Revision No : 0
1/1
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页数 | 1 页 | ||
下载 | [ E50A2CPR.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
E50A2CPR | STACK SILICON DIFFUSED DIODE | KEC |
E50A2CPS | STACK SILICON DIFFUSED DIODE | KEC |
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