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零件编号 | NX2020P1 | ||
描述 | single P-channel Trench MOSFET | ||
制造商 | NXP Semiconductors | ||
LOGO | |||
1 Page
NX2020P1
30 V, single P-channel Trench MOSFET
22 January 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated 100 % solderable side pads for optical solder inspection
3. Applications
• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portable devices
• Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; ID = -4 A; Tj = 25 °C
Min Typ Max Unit
- - -30 V
-12 -
12 V
[1] - - -5 A
- 47 58 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
NX2020P1
30 V, single P-channel Trench MOSFET
-14
ID
(A)
-12
-10
-8
017aaa890
1.6
a
1.4
1.2
017aaa891
-6
-4
-2
Tj = 150 °C
Tj = 25 °C
1.0
0.8
0
0 -0.5 -1.0
VDS > ID × RDSon
-1.5 -2.0
VGS (V)
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.6
-60 0 60 120 180
Tj (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
-1.2
VGS(th)
(V)
-0.8
-0.4
max
typ
min
017aaa892
104
C
(pF)
103
102
017aaa893
Ciss
Coss
Crss
0
-60 0 60
ID = -0.25 mA; VDS = VGS
120 180
Tj (°C)
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
10
-10-1
-1
f = 1 MHz; VGS = 0 V
-10 -102
VDS (V)
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
NX2020P1
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 January 2014
© NXP N.V. 2014. All rights reserved
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页数 | 15 页 | ||
下载 | [ NX2020P1.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
NX2020P1 | single P-channel Trench MOSFET | NXP Semiconductors |
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