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PDF ( 数据手册 , 数据表 ) 9NK60Z

零件编号 9NK60Z
描述 N-Channel Enhancement Mode MOSFET
制造商 STMicroelectronics
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9NK60Z 数据手册, 描述, 功能
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
N-channel 600 V, 0.85 Ω typ., 7 A Zener-protected SuperMESH™
Power MOSFET in D²PAK, TO-220 and TO-220FP packages
Datasheet production data
Features
Order codes
STB9NK60ZT4
STP9NK60Z
STP9NK60ZFP
VDS RDS(on) max ID PTOT
600
V
125 W
0.95 Ω 7 A
30 W
Extremely high dv/dt capability
Improved ESD capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
TAB
3
1
D2PAK
TAB
3
2
1
TO-220
3
2
1
TO-220FP
Applications
Switching applications
Figure 1. Internal schematic diagram
, TAB
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
SC15010
Table 1. Device summary
Order codes
STB9NK60ZT4
STP9NK60Z
STP9NK60ZFP
Marking
B9NK60Z
P9NK60Z
P9NK60ZFP
Package
D2PAK
TO-220
TO-220FP
Packaging
Tube
January 2013
This is information on a product in full production.
Doc ID 8799 Rev 3
1/19
www.st.com
19







9NK60Z pdf, 数据表
Electrical characteristics
Figure 8. Transconductance
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
Figure 9. Static drain-source on-resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs
vs temperature
temperature
8/19 Doc ID 8799 Rev 3







9NK60Z equivalent, schematic
Package mechanical data
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
Table 12. TO-220FP mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
mm
Typ.
16
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
16/19
Doc ID 8799 Rev 3










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