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PDF ( 数据手册 , 数据表 ) MJE13003-V

零件编号 MJE13003-V
描述 NPN SILICON TRANSISTOR
制造商 Unisonic Technologies
LOGO Unisonic Technologies LOGO 


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MJE13003-V 数据手册, 描述, 功能
UNISONIC TECHNOLOGIES CO., LTD
MJE13003-V
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTOR
„ DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V applications in switch
mode.
„ FEATURES
* Reverse biased SOA with inductive load @ TC=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tC = 290ns @ 1A, 100°C.
* 700V blocking capability
„ APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 9
QW-R204-034.a







MJE13003-V pdf, 数据表
MJE13003-V
„ TYPICAL CHARACTERISTICS
DC Current Gain
80
60
TJ=150°C
40
30 25°C
20
-55°C
1
0
8
6
VCE=2V
- - - - - -VCE=5V
4
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7
Collector Current,IC (A)
1
2
Base-Emitter Voltage
1.4
VBE(SAT) @ IC/IB=3
1.2 - - - - - -VBE(ON) @ VCE=2V
1 TJ=-55°C
25°C
0.8
25°C
0.6 150°C
0.4
0.02 0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1
Collector Current,IC (A)
2
Collector cut-off Region
4
10
VCE=250V
3
10
TJ=150°C
2
10
125°C
100°C
1
10 75°C
50°C
0
10
-1
10
-0.4
25°C
REVERSE
-0.2
0
FORWARD
+0.2
+0.4
Base-Emitter Voltage, VBE (V)
+0.6
NPN SILICON TRANSISTOR
Collector Saturation Region
2
TJ=25°C
1.6
1.2 Ic=0.1A 0.3A 0.5A 1A 1.5A
0.8
0.4
0
0.002 0.005 0.01 0.02
0.05 0.1 0.2
0.5
Base Current, IB (A)
1
2
Collector-Emitter Saturation Region
0.35
0.3
0.25 Ic/IB=3
0.2
TJ=-55°C
0.15 25°C
0.1
150°C
0.05
0
0.02 0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1
Collector Current, IC (A)
2
Capacitance
500
300
200 CIB
TJ=25°C
100
70
50
30
20
10
7
5
0.1 0.2 0.5
COB
1 2 5 10 20 50 100 200 500 1000
Reverse Voltage, VR (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
8 of 9
QW-R204-034.a














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