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PDF ( 数据手册 , 数据表 ) 2N2222A-M

零件编号 2N2222A-M
描述 TRANSISTOR
制造商 DSI
LOGO DSI LOGO 


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2N2222A-M 数据手册, 描述, 功能
Technical Data
TRANSISTOR
maximum ratings
Voltage, Collector to Base (VCBO)
Voltage, Collector to Emitter (VCE)
Voltage, Emitter to Base (VEBO)
Collector Current (IC)
Base Current (IB)
Max. Power Dissipation (PT) at TC = 25 °C
Max. Thermal Resistance (Rth J-C)
Max. Junction Temperature (TJ)
empty
75.0 V
40.0 V
6.0 V
0.8 A
0.08 A
1.8 W
84.0 °C/W
200.0 °C
empty empty
NO.
TYPE
empty
empty
CASE
empty
empty
2N2222A-M
NPN
empty
empty
TO-18
MIL-S-19500
BURN-IN 48h/125°C
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. BVCEO
IC = 10 mA
(1) 40.0
-
V
2. BVCBO
IC = 10 µA
(1) 75.0
-
V
3. BVEBO
IE = 10 µA
(1) 6.0
-
V
4. ICBO
VCB = 60 V
- 10.0 nA
5. - VCB = 60 V , TA = 150 °C
- 10.0 µA
6. IEBO
VEB = 3 V
- 10.0 nA
7. hFE
IC = 0.1 A , VCE = 10 V
(1) 35.0
-
-
8. - IC = 1 mA , VCE = 10 V
(1) 50.0
-
-
9. - IC = 10 mA , VCE = 10 V
(1) 75.0
-
-
10. -
IC = 150 mA , VCE = 10 V
(1) 100.0
300.0
-
11. -
IC = 500 mA , VCE = 10 V
(1) 40.0
-
-
12. VCE(SAT) IC = 150 mA , IB = 15 mA
(1) - 0.3 V
13. -
IC = 500 mA , IB = 50 mA
(1) - 1.0 V
14. VBE(SAT) IC = 150 mA , IB = 15 mA
(1) - 1.2 V
15. -
IC = 500 mA , IB = 50 mA
(1) - 2.0 V
16. fT
IC = 20 mA , VCE = 20 V
300.0
-
MHz
17. Cobo
VCB = 10 V
- 8.0 pF
18. Cebo
VEB = 0.5 V
- 25.0 pF
19.
20.
Notes
(1)pulse-tested tp 300 µs, duty cycle 2 %
empty
empty
empty
DIMENSIONS
in mm
Marking 2N2222A-M + GREEN DOT
Customer GENERAL PURPOSE












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