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零件编号 | IRF135B203 | ||
描述 | Power MOSFET ( Transistor ) | ||
制造商 | International Rectifier | ||
LOGO | |||
1 Page
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
G
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant, Halogen-Free
StrongIRFET™
IRF135B203
IRF135S203
HEXFET® Power MOSFET
D VDSS
135V
RDS(on) typ.
max
6.7m
8.4m
IS
D (Silicon Limited)
129A
GDS
TO-220AB
IRF135B203
D
S
G
D2-Pak
IRF135S203
G
Gate
D
Drain
S
Source
Base part number
IRF135B201
IRF135S201
Package Type
TO-220
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel
800
Orderable Part Number
IRF135B203
IRF135S203
28
26
24
22
20
18
16
14
12
10
8
6
4
2
ID = 77A
TJ = 125°C
TJ = 25°C
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On– Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
140
120
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
June 17, 2015
IRF135B203/IRF135S203
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 23a. Unclamped Inductive Test Circuit
I AS
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
VDD
Fig 25a. Gate Charge Test Circuit
8 www.irf.com © 2015 International Rectifier
Fig 24b. Switching Time Waveforms
Vds
Id
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 25b. Gate Charge Waveform
Submit Datasheet Feedback
June 17, 2015
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页数 | 12 页 | ||
下载 | [ IRF135B203.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
IRF135B203 | Power MOSFET ( Transistor ) | International Rectifier |
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