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零件编号 | IRL1404PBF | ||
描述 | Power MOSFET ( Transistor ) | ||
制造商 | International Rectifier | ||
LOGO | |||
1 Page
PD - 95588A
IRL1404PbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
D
VDSS = 40V
RDS(on) = 4.0mΩ
G
S ID = 160A
Description
Seventh Generation HEXFET® power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The
low thermal resistance and low package cost of the TO-220 contribute to
its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mounted)
Max.
160
110
640
200
1.3
± 20
620
95
20
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
www.irf.com
1
09/27/10
IRL1404PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
AS S EMBLED ON WW 19, 2000
IN THE AS S EMBLY LINE "C"
Note: "P" in as sembly line position
indicates "Lead - Free"
INT ERNAT IONAL
RECT IFIER
L OGO
AS S EMBLY
LOT CODE
PART NUMBER
DAT E CODE
YEAR 0 = 2000
WEEK 19
LINE C
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2010
8 www.irf.com
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页数 | 8 页 | ||
下载 | [ IRL1404PBF.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
IRL1404PBF | Power MOSFET ( Transistor ) | International Rectifier |
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