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PDF ( 数据手册 , 数据表 ) IGD06N60T

零件编号 IGD06N60T
描述 IGBT
制造商 Infineon
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IGD06N60T 数据手册, 描述, 功能
Low Loss IGBT:
IGD06N60T
TRENCHSTOPSeries
q
IGBT in TRENCHSTOPand Fieldstop technology
Features:
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
TRENCHSTOPand Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Variable Speed Drive for washing machines and air conditioners
Buck converters
C
G
E
PG-TO252-3 (D-PAK)
Type
IGD06N60T
VCE
600V
IC;Tc=100°C VCE(sat),Tj=25°C Tj,max
6A
1.5V
175C
Marking
G06T60
Package
PG-TO252-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature
reflow soldering, MSL1
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
Value
600
12
6
18
18
20
5
88
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.2, 20.09.2013







IGD06N60T pdf, 数据表
IGD06N60T
TRENCHSTOPSeries
q
15V
10V
5V
120V
480V
0V0nC 10 nC 20n C 30nC 40nC 50nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 6 A)
1nF
C iss
100pF
C oss
10pF
C rss
0V 10V 20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
80A
60A
40A
20A
0A12V 14V 16V 18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE 400V, Tj 150C)
12µs
10µs
8µs
6µs
4µs
2µs
0µs
10V
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at TJ=25°C,
TJmax<150°C)
IFAG IPC TD VLS
8
Rev. 2.2, 20.09.2013














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