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PDF ( 数据手册 , 数据表 ) DBD10G

零件编号 DBD10G
描述 1.0A Single-Phase Bridge Rectifier
制造商 ON Semiconductor
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DBD10G 数据手册, 描述, 功能
Ordering number : EN7030B
DBD10G
1.0A Single-Phase Bridge Rectifier
http://onsemi.com
Features
Plastic molded structure
Peak reverse voltage : VRM=600V
Average output current : IO=1.0A
Electrical Connection
-- +
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Conditions
Ta=25°C
50Hz sine wave, 1cycle
Value
600
1.0
30
150
--40 to +150
Unit
V
A
A
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Electrical Characteristics at Ta=25°C
Parameter
Forward Voltage
Reverse Current
Thremal Resistance
Thremal Resistance
Symbol
VF
IR
Rth(j-l)
Rth(j-a)
Conditions
IF=0.5A
VR=VRM
Junction-Lead
Junction-Ambient
min
Value
typ
max
Unit
1.05
V
10 mA
15 °C / W
68 °C / W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Package Dimensions
unit:mm(typ.)
Surface mount type (TM emboss taping)
0.25
1.3 3.0 1.3
6.8
C0.8
6.8 C0.8
0.25
DBD10G-TM-E
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
June, 2014
0.55
5.0
DBD10G-E
60814HK TC-00003130/N0901GIIM/73001GIIM No. A7030-1/2












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