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零件编号 | H40T60 | ||
描述 | IGBT | ||
制造商 | Infineon | ||
LOGO | |||
1 Page
Soft Switching Series
IHW40N60T
q
Low Loss DuoPack : IGBT in TrenchStop® -technology with anti-parallel diode
Features:
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
C
• Short circuit withstand time – 5µs
• TrenchStop® and Fieldstop technology for 600 V applications
G
E
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
PG-TO-247-3
• Low Gate Charge
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
• Inductive Cooking
• Soft Switching Applications
Type
VCE
IC
VCE(sat),Tj=25°C Tj,max
Marking
IHW40N60T 600V 40A
1.55V
175°C H40T60
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Short circuit withstand time2)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
600
80
40
120
120
40
20
60
±20
±25
5
303
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.3 Sep. 08
Soft Switching Series
IHW40N60T
q
12V
120V
9V 480V
1nF
Ciss
6V
3V
0V 0nC 30nC 60nC 90nC 120nC150nC180nC210nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=40 A)
100pF
Coss
Crss
0V 10V 20V 30V 40V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
D=0.5
D=0.5
10-1K/W
0.2
0.1
0.05
0.02
R,(K/W)
0.093
0.119
0.0828
0.0386
0.0221
τ, (s)
8.74*10-2
1.07*10-2
7.49*10-4
8.85*10-5
7.39*10-6
0.01 R1
R2
10-2K/W
single pulse C 1 = τ1/ R 1 C 2 = τ2/ R 2
1µs 10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 19. IGBT transient thermal resistance
(D = tp / T)
0.2
10-1K/W 0.1
0.05
0.02
0.01
R,(K/W)
0.151
0.223
0.273
0.111
R1
τ, (s)
1.26*10-1
9.7*10-3
1.4*10-3
1.51*10-4
R2
single pulse
10-2K/W
10µs
100µs
C1=τ1/R1 C2=τ2/R2
1ms 10ms 100ms
tP, PULSE WIDTH
Figure 20. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
Power Semiconductors
8
Rev. 2.3 Sep. 08
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页数 | 12 页 | ||
下载 | [ H40T60.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
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