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零件编号 | MTB025C04H8 | ||
描述 | N- AND P-Channel Enhancement Mode MOSFET | ||
制造商 | Cystech Electonics | ||
LOGO | |||
1 Page
CYStech Electronics Corp.
Spec. No. : C955H8
Issued Date : 2015.11.02
Revised Date :
Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTB025C04H8
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.5V(-4.5V)
N-CH
40V
7.3A
21A
18.3mΩ
26.6mΩ
P-CH
-40V
-6.6A
-19A
28.3mΩ
41.3mΩ
Equivalent Circuit
MTB025C04H8
Outline
Pin 1
DFN5×6
G:Gate S:Source D:Drain
Ordering Information
Device
MTB025C04H8-0-T6-G
Package
Shipping
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB025C04H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C955H8
Issued Date : 2015.11.02
Revised Date :
Page No. : 8/13
Typical Characteristics : Q2( P-channel)
40
35
30
25
20
15
10
5
0
0
Typical Output Characteristics
-10V, -9V, -8V, -7V,-6V
-5V
-4.5V
VGS=-2.5V
-4V
-3.5V
VGS=-3V
1 23 4
-VDS, Drain-Source Voltage(V)
5
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6 ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
1000
VGS=-3V VGS=-4V
100
Source Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
10
0.01
VGS=-4.5V
VGS=-10V
0.1 1
-ID, Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160 ID=-12A
140
120
100
80
60
40
20
0
0 2 4 6 8 10
-VGS, Gate-Source Voltage(V)
0.4 Tj=150°C
0.2
0
2 46 8
-IS, Source Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
2
1.8
VGS=-10V, ID=-12A
1.6
1.4
1.2
1
0.8
0.6 RDS(ON)@Tj=25°C : 28.3mΩ
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB025C04H8
CYStek Product Specification
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页数 | 13 页 | ||
下载 | [ MTB025C04H8.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
MTB025C04H8 | N- AND P-Channel Enhancement Mode MOSFET | Cystech Electonics |
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