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PDF ( 数据手册 , 数据表 ) IGC99T120T6RM

零件编号 IGC99T120T6RM
描述 IGBT4 Medium Power Chip
制造商 Infineon
LOGO Infineon LOGO 


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IGC99T120T6RM 数据手册, 描述, 功能
IGC99T120T6RM
IGBT4 Medium Power Chip
FEATURES:
1200V Trench + Field Stop technology
low switching losses
soft turn off
positive temperature coefficient
easy paralleling
This chip is used for:
medium power modules
Applications:
medium power drives
C
G
E
Chip Type
VCE ICn
Die Size
IGC99T120T6RM 1200V 100A 10.39 x 9.5 mm2
Package
sawn on foil
MECHANICAL PARAMETER
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
10.39 x 9.5
7.987 x 8.923
1.31 x 0.811
mm 2
98.7 / 76.1
120 µm
150 mm
90 grd
140
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
0.65mm ; max 1.2mm
Store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7683B, Editi on 1 , 31.10 .2007












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