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零件编号 | 2EDL05I06PJ | ||
描述 | 600V half bridge gate drive IC | ||
制造商 | Infineon | ||
LOGO | |||
1 Page
EiceDRIVER™ Compact
High voltage gate driver IC
2EDL family
600 V half bridge gate drive IC
2EDL05I06PF
2EDL05I06PJ
2EDL05I06BF
2EDL05N06PF
2EDL05N06PJ
EiceDRIVER™ Compact
Final datasheet
<Revision 2.6>, 01.06.2016
Final
Industrial Power Control
EiceDRIVER™ Compact
2EDL family
Description
The 2EDL family contains devices, which control power devices like MOS-transistors or IGBTs with a maximum
blocking voltage of +600V in half bridge configurations. Based on the used SOI-technology there is an excellent
ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic
latch up may occur at all temperature and voltage conditions.
The two independent drivers outputs are controlled at the low-side using two different CMOS resp. LSTTL
compatible signals, down up to 3.3V logic. The device includes an under-voltage detection unit with hysteresis
characteristic which are optimised either for IGBT or MOSFET.
Those parts, which are designed for IGBT have asymmetric undervoltage lockout levels, which support strongly
the integrated ultrafast bootstrap diode. Additionally, the offline gate clamping function provides an inherent
protection of the transistors for parasitic turn-on by floating gate conditions, when the IC is not supplied via VDD.
+5V
µC
PWM_H
PWM_L
GND
VCC
VDCDC
VB
HO
2EDL05x06yy
VS
HIN
LIN
GND
LO
Figure 1 Typical Application
SO8 / SO14 package 0.5 A
DC-Bus
To
Load
To Opamp /
Comparator
- DC-Bus
Final datasheet
8 <Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
Table 6
Static parameters
Parameter
Symbol
Min.
Quiescent current VDD supply (VDD only) IQDD1
Quiescent current VDD supply (VDD only) IQDD2
Quiescent current VDD supply (VDD only) IQDD3
–
–
–
Input bias current
Input bias current
Input bias current
Input bias current
Mean output current for load capacity
charging in range from 3 V (20%) to 6 V
(40%)
Peak output current turn on (single pulse)
ILIN+
ILIN–
IHIN+
IHIN–
IO+
IOpk+1
15
–
15
–
0.18
–
Mean output current for load capacity
discharging in range from 12 V (80%) to 9 V
(60%)
Peak output current turn off (single pulse)
IO–
IOpk–1
Bootstrap diode forward voltage between
VDD and VB
Bootstrap diode forward current between
VDD and VB
Bootstrap diode resistance
VF,BSD
IF,BSD
RBSD
0.39
–
–
30
20
Values
Typ.
Max.
0.3 0.6
0.28
0.6
0.28
0.6
35 60
0–
35 60
0–
0.23 –
Unit Test
condition
current types
mA VLIN = float.
VLIN = 3.3 V,
VHIN=0
VLIN=0 ,
VHIN=3.3 V
µA VLIN = 3.3 V
VLIN = 0
VHIN = 3.3 V
VHIN = 0
A CL = 22 nF
0.36 –
0.48 –
RL = 0 , tp
<10 µs
CL = 22 nF
0.70 –
RL = 0 , tp
<10 µs
1.0 1.2 V IF = 0.3 mA
55 80 mA VDD – VB = 4 V
36 54 VF1 = 4 V, VF2
=5V
1 Not subject of production test, verified by characterisation
Final datasheet
16
<Revision 2.6>, 01.06.2016
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页数 | 22 页 | ||
下载 | [ 2EDL05I06PJ.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
2EDL05I06PF | 600V half bridge gate drive IC | Infineon |
2EDL05I06PJ | 600V half bridge gate drive IC | Infineon |
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