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PDF ( 数据手册 , 数据表 ) IRL3103PbF

零件编号 IRL3103PbF
描述 Power MOSFET ( Transistor )
制造商 International Rectifier
LOGO International Rectifier LOGO 


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IRL3103PbF 数据手册, 描述, 功能
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
G
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD - 94994
IRL3103PbF
HEXFET® Power MOSFET
D VDSS = 30V
RDS(on) = 12m
ID = 64A
S
TO-220AB
Max.
64
45
220
94
0.63
± 16
34
22
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
1.6
–––
62
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Units
°C/W
1
2/10/04







IRL3103PbF pdf, 数据表
IRL3103PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
10.54 (.415)
10.29 (.405)
3.78 (.149)
3.54 (.139)
-A-
15.24 (.600)
14.84 (.584)
6.47 (.255)
4 6.10 (.240)
1 23
1.15 (.045)
MIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
4.69 (.185)
4.20 (.165)
-B-
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
HELXEFAE1DT-AGSASTIGENMEINGTBSTs, CoPACK
1- GAT2E- DRAIN 1- GATE
2- DRA3IN- SOURCE 2- COLLECTOR
3- SOU4R-CDERAIN 3- EMITTER
4- DRAIN
4- COLLECTOR
3X
1.40 (.055)
1.15 (.045)
2.54 (.100)
3X
0.93 (.037)
0.69 (.027)
0.36 (.014) M B A M
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPL E :
T HIS IS AN IR F 1010
LOT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
PAR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 2/04
8 www.irf.com














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