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PDF ( 数据手册 , 数据表 ) STD22NM20N

零件编号 STD22NM20N
描述 N-CHANNEL MOSFET
制造商 STMicroelectronics
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STD22NM20N 数据手册, 描述, 功能
STD22NM20N
N-CHANNEL 200V - 0.088- 22A DPAK
ULTRA LOW GATE CHARGE MDmesh™ II MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
STD22NM20N
200 V
< 0.105 22 A
s WORLDWIDE LOWEST GATE CHARGE
s TYPICAL RDS(on) = 0.088
s HIGH dv/dt and AVALANCHE CAPABILITIES
s LOW INPUT CAPACITANCE
s LOW GATE RESISTANCE
DESCRIPTION
This 200V MOSFET with a new advanced layout
brings all unique advantages of MDmesh technol-
ogy to lower voltages. The device exhibits world-
wide lowest gate charge for any given on-
resistance. Its use is therefore ideal as primary
switch in isolated DC-DC converters for Telecom
and Computer applications. Used in combination
with secondary-side low-voltage STripFET™
products, it contributes to reducting losses and
boosting effeciency.
Figure 1: Package
3
1
DPAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
The MDmesh™ family is very suitable for increas-
ing power density allowing system miniaturization
and higher efficiencies
Table 2: Order Codes
SALES TYPE
STD22NM20NT4
MARKING
D22NM20N
PACKAGE
DPAK
PACKAGING
TAPE & REEL
June 2005
Rev. 4
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STD22NM20N pdf, 数据表
STD22NM20N
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
TAPE MECHANICAL DATA
mm inch
DIM.
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1
12.1
0.476
D 1.5 1.6 0.059 0.063
D1 1.5
0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40
1.574
W 15.7 16.3 0.618 0.641
REEL MECHANICAL DATA
mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5
0.059
C 12.8 13.2 0.504 0.520
D 20.2
0.795
G 16.4 18.4 0.645 0.724
N 50
1.968
T
22.4
0.881
BASE QTY
2500
BULK QTY
2500
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