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PDF ( 数据手册 , 数据表 ) HSMS-270B

零件编号 HSMS-270B
描述 High Performance Schottky Diode
制造商 AVAGO
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HSMS-270B 数据手册, 描述, 功能
HSMS-2700, 2702, 270B, 270C, 270P
High Performance Schottky Diode
for Transient Suppression
Data Sheet
Description
The HSMS-2700 series of Schottky diodes, commonly
referred to as clipping /clamping diodes, are optimal for
circuit and waveshape preservation applications with
high speed switching. Ultra-low series resistance, RS,
makes them ideal for protecting sensitive circuit elements
against higher current transients carried on data lines.
With picosecond switching, the HSMS-270x can respond
to noise spikes with rise times as fast as 1 ns. Low ca-
pacitance minimizes waveshape loss that causes signal
degradation.
Features
Ultra-low Series Resistance for Higher Current
Handling
Picosecond Switching
Low Capacitance
Lead-free
Applications
RF and computer designs that require circuit protection,
high-speed switching, and voltage clamping.
HSMS-270x DC Electrical Specifications, TA = +25°C[1]
Part Package
Number Marking Lead
HSMS- Code[2] Code Configuration Package
-2700 J0
0 Single
SOT-23
Maximum
Forward
Voltage
VF (mV)
Minimum
Breakdown
Voltage
VBR (V)
Typical
Capacitance
CT (pF)
Typical
Series
Resistance
RS (Ω)
-270B
B
SOT-323
(3-lead SC-70)
-2702
-270C
J2
2
C Series
SOT-23
550 [3]
SOT-323
(3-lead SC-70)
15[4]
6.7[5]
0.65
-270P JP
P
Bridge Quad
SOT-363
(6-lead SC-70)
Notes:
1. TA = +25°C, where TA is defined to be the temperature at the package pins where contact is made to the circuit board.
2. Package marking code is laser marked.
3. IF = 100 mA; 100% tested
4. IR = 100 μA; 100% tested
5. VF = 0; f =1 MHz
6. Measured with Karkauer method at 20 mA; guaranteed by design.
Maximum
Eff. Carrier
Lifetime
τ (ps)
100[6]
Package Lead Code Identification (Top View)
SINGLE
3
SERIES
3
BRIDGE QUAD
6 54
1 0, B 2
1 2, C 2
123







HSMS-270B pdf, 数据表
Because the automatic, pick-and-place equipment used
to assemble these products selects dice from adjacent
sites on the wafer, the two diodes which go into the
HSMS-2702 or HSMS-270C (series pair) are closely
matched —without the added expense of testing and
binning.
Current Handling in Clipping/Clamping Circuits
The purpose of a clipping/clamping diode is to handle
high currents, protecting delicate circuits downstream
of the diode. Current handling capacity is determined
by two sets of characteristics, those of the chip or device
itself and those of the package into which it is mounted.
noisy data-spikes
current
limiting
Vs
tained at a low limit even at high values of current.
Maximum reliability is obtained in a Schottky diode when
the steady state junction temperature is maintained at or
below 150°C, although brief excursions to higher junction
temperatures can be tolerated with no significant impact
upon mean-time-to-failure, MTTF. In order to compute
the junction temperature, Equations (1) and (3) below
must be simultaneously solved.
11600 ( V F I FR S)
IF = IS e nTJ –1
(1)
IS = I0
TJ
2
n 4060
e
1– 1
TJ 298
298
(2)
long cross-site cable
pull-down
(or pull-up)
0V
voltage limited to
Vs + Vd
0V – Vd
Figure 8. Two Schottky Diodes Are Used for Clipping/Clamping in a Circuit.
Consider the circuit shown in Figure 8, in which two
Schottky diodes are used to protect a circuit from noise
spikes on a stream of digital data. The ability of the diodes
to limit the voltage spikes is related to their ability to sink
the associated current spikes. The importance of current
handling capacity is shown in Figure 9, where the forward
voltage generated by a forward current is compared in
two diodes.
6
5
4
Rs = 7.7
3
2
1 Rs = 1.0
0
0 0.1 0.2 0.3 0.4 0.5
IF – FORWARD CURRENT (mA)
Figure 9. Comparison of Two Diodes.
The first is a conventional Schottky diode of the type
generally used in RF circuits, with an RS of 7.7 Ω. The
second is a Schottky diode of identical characteristics,
save the RS of 1.0 Ω. For the conventional diode, the
relatively high value of RS causes the voltage across the
diode’s terminals to rise as current increases. The power
dissipated in the diode heats the junction, causing RS to
climb, giving rise to a runaway thermal condition. In the
second diode with low RS, such heating does not take
place and the voltage across the diode terminals is main-
8
TJ = V FI F JC + TA
(3)
where:
IF = forward current
IS = saturation current
VF = forward voltage
RS = series resistance
TJ = junction temperature
IO = saturation current at 25°C
n = diode ideality factor
θJC = thermal resistance from junction to case (diode
lead)
= θpackage + θchip
TA = ambient (diode lead) temperature
Equation (1) describes the forward V-I curve of a Schottky
diode. Equation (2) provides the value for the diode’s satu-
ration current, which value is plugged into (1). Equation
(3) gives the value of junction temperature as a function
of power dissipated in the diode and ambient (lead)
temperature.
The key factors in these equations are: RS, the series resis-
tance of the diode where heat is generated under high
current conditions; θchip, the chip thermal resistance of
the Schottky die; and θpackage, or the package thermal
resistance.
RS for the HSMS-270x family of diodes is typically 0.7 Ω
and is the lowest of any Schottky diode available from
Avago. Chip thermal resistance is typically 40°C/W; the
thermal resistance of the iron-alloy-leadframe, SOT-23
package is typically 460°C/W; and the thermal resistance
of the copper-leadframe, SOT-323 package is typically
110°C/W. The impact of package thermal resistance on
the current handling capability of these diodes can be
seen in Figures 3 and 4. Here the computed values of
junction temperature vs. forward current are shown














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