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零件编号 | AT-32033 | ||
描述 | High Performance NPN Silicon Bipolar Transistor | ||
制造商 | AVAGO | ||
LOGO | |||
1 Page
AT-32011, AT-32033
Low Current, High Performance NPN
Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-32011 and AT-32033 are high performance
NPN bipolar transistors that have been optimized for
maximum ft at low voltage operation, making them ideal
for use in battery powered applications in wireless mar-
kets. The AT-32033 uses the 3 lead SOT‑23, while the AT-
32011 places the same die in the higher performance 4
lead SOT-143. Both packages are industry standard, and
compatible with high volume surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of these transistors yields extremely high
performance products that can perform a multiplicity
of tasks. The 20 emitter finger interdigitated geometry
yields an easy to match to and extremely fast transistor
with moderate power, low noise resistance, and low op-
erating currents.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buffer, oscilla
tor, or active mixer. Typical amplifier designs at 900 MHz
yield 1.2 dB noise figures with 12 dB or more associated
gain at a 2.7 V, 2 mA bias, with noise performance being
relatively insensitive to input match. High gain capabil-
ity at 1 V, 1 mA makes these devices a good fit for 900
MHz pager applications. Voltage breakdowns are high
enough for use at 5 volts.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz ft, 30 GHz fMAX
Self-Aligned-Transistor (SAT) process. The die are nitride
passivated for surface protection. Excellent device uni-
formity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and
gold metalization in the fabrication of these devices.
Features
• High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation
• 900 MHz Performance:
AT-32011: 1 dB NF, 14 dB GA
AT-32033: 1 dB NF, 12.5 dB GA
• Characterized for End-Of-Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT Plastic Packages
• Tape-And-Reel Packaging Option Available
• Lead-free
Pin Connections and Package Marking
EMITTER COLLECTOR
320x
BASE EMITTER
SOT-143 (AT-32011)
COLLECTOR
320x
BASE EMITTER
SOT-23 (AT-32033)
Notes:
Top View.
Note:
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AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 2 mA
Freq. S11
S21
S12 S22
GHz Mag Ang dB Mag Ang dB
Mag Ang Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.95
-13 16.65 6.80 170 -35.84 0.016 82 0.99
-6
0.81
-57 15.18 5.74 137 -23.56 0.066 58 0.87 -23
0.68
-93 13.16 4.55 113 -20.72 0.092 43 0.74 -34
0.64 -100 12.69 4.31 109 -20.42 0.095 40 0.72 -36
0.55
-133
10.31
3.28
88
-19.49
0.106
32
0.63
-43
0.51
-150
9.05
2.84
78
-19.29
0.109
29
0.60
-47
0.49
-161
8.43
2.64
71
-19.22
0.109
28
0.58
-50
0.47
180
7.06
2.25
60
-19.03
0.112
29
0.55 -55
0.47
153
5.29
1.84
45
-18.72
0.116
31
0.54 -62
0.52
118
3.07
1.42
24
-17.19
0.138
37
0.52 -75
0.59
94
1.17
1.14
6
-14.73
0.183
38
0.51
-92
30
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA
20
MSG
Freq.
GHz
0.5[1]
FdmBin
Γ op t
Mag Ang
0.52
0.73
20
R–n
0.34
10
S21
MAG
0.9
0.75
0.63
49 0.28
1.8
2.4
1.26
1.60
0.44
0.45
111 0.16
153 0.09
00 1 2 3 4 5
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
FREQUENCY (GHz)
Figure 23. AT-32011 Gains vs. Frequency at Vce = 5 V,
Ic = 2 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 2 mA
AT-32011 fig 23
Freq. S11
S21
S12 S22
GHz Mag Ang dB Mag Ang dB
Mag Ang Mag Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.94
-13 16.56 6.73 167 -35.39 0.017 82 0.99
-5
0.69
-54 14.34 5.21 128 -23.74 0.065 62 0.85 -21
0.45
-82 11.62 3.81 102 -20.92 0.090 56 0.73 -28
0.40
-89
11.03
3.56
98
-20.35
0.096
55
0.72
-30
0.23
-121
8.33
2.61
77
-18.49
0.119
56
0.66
-35
0.17
-147
7.04
2.25
68
-17.39
0.135
58
0.65
-37
0.15
-167
6.36
2.08
62
-16.59
0.148
59
0.63
-40
0.14
151
5.06
1.79
51
-15.14
0.175
60
0.62 -44
0.20
109
3.52
1.50
37
-12.92
0.226
59
0.61 -53
0.31
76
1.66
1.21
19
-9.55
0.333
53
0.59
-70
0.38
55
0.26
1.03
5
-6.80
0.457
42
0.55
-90
30
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 5 V, IC = 2 mA
20
Freq.
GHz
FdmBin
Γ op t
Mag Ang
R–n
MSG
0.5[1]
0.9
0.52
0.75
0.79
0.65
15 0.42
48 0.30
MAG
10
S21
MSG
1.8
1.26
0.33
127 0.11
2.4
1.60
0.39
-166
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
0.07
00 1 2 3 4 5
FREQUENCY (GHz)
Figure 24. AT-32033 Gains vs. Frequency at Vce = 5 V,
Ic = 2 mA.
AT-32011 fig 24
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页数 | 10 页 | ||
下载 | [ AT-32033.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
AT-32032 | High Performance NPN Silicon Bipolar Transistor | AVAGO |
AT-32032-BLK | AT32032 | Agilent(Hewlett-Packard) |
AT-32032-TR1 | AT32032 | Agilent(Hewlett-Packard) |
AT-32033 | Low Current/ High Performance NPN Silicon Bipolar Transistor | Agilent(Hewlett-Packard) |
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