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PDF ( 数据手册 , 数据表 ) IPD60R2K1CE

零件编号 IPD60R2K1CE
描述 MOSFET ( Transistor )
制造商 Infineon Technologies
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IPD60R2K1CE 数据手册, 描述, 功能
IPD60R2K1CE,IPU60R2K1CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
DPAK
tab
2
1
3
IPAK
tab
12 3
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
2100
m
Id. 3.7 A
Qg.typ
6.7
nC
ID,pulse
6
A
Eoss@400V
0.76
µJ
Type/OrderingCode
IPD60R2K1CE
IPU60R2K1CE
Package
PG-TO 252
PG-TO 251
Marking
60S2K1CE
RelatedLinks
see Appendix A
Final Data Sheet
1
2016-03-31







IPD60R2K1CE pdf, 数据表
600VCoolMOSªCEPowerTransistor
IPD60R2K1CE,IPU60R2K1CE
Diagram9:Typ.transfercharacteristics
6
5
4
3
2
1
0
0246
VGS[V]
ID=f(VGS);VDS=20V;parameter:Tj
8
25 °C
Diagram10:Typ.gatecharge
10
9
8
7
120 V
480 V
150 °C
6
5
4
3
2
1
10 12
0
0123456
Qgate[nC]
VGS=f(Qgate);ID=0.9Apulsed;parameter:VDD
7
Diagram11:Forwardcharacteristicsofreversediode
102
25 °C
125 °C
Diagram12:Avalancheenergy
12
11
10
9
101 8
7
6
5
100 4
3
2
1
10-1
0.0
0.5
IF=f(VSD);parameter:Tj
1.0
VSD[V]
1.5
0
2.0 25 50 75 100 125 150
Tj[°C]
EAS=f(Tj);ID=0.4A;VDD=50V
Final Data Sheet
8
2016-03-31














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