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PDF ( 数据手册 , 数据表 ) IPD60R650CE

零件编号 IPD60R650CE
描述 MOSFET ( Transistor )
制造商 Infineon Technologies
LOGO Infineon Technologies LOGO 


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IPD60R650CE 数据手册, 描述, 功能
IPD60R650CE,IPA60R650CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:Note1:ForMOSFETparallelingtheuseofferritebeadson
thegateorseparatetotempolesisgenerallyrecommended.
Note2:*6R650CEisFullPAKmarkingonly
DPAK
tab
2
1
3
PG-TO220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
650
m
Id. 9.9 A
Qg.typ
20.5
nC
ID,pulse
19
A
Eoss@400V
1.9
µJ
Type/OrderingCode
IPD60R650CE
IPA60R650CE
Package
PG-TO 252
PG-TO 220 FullPAK
Marking
RelatedLinks
60S650CE / 6R650CE*
see Appendix A
Final Data Sheet
1 Rev.2.2,2016-08-08







IPD60R650CE pdf, 数据表
600VCoolMOSªCEPowerTransistor
IPD60R650CE,IPA60R650CE
Diagram5:Safeoperatingarea(NonFullPAK)
102
1 µs
101 10 µs
100 µs
1 ms
100
DC
10-1
10-2
Diagram6:Safeoperatingarea(FullPAK)
102
1 µs
101 10 µs
100 µs
1 ms
100
10 ms
DC
10-1
10-2
10-3
10-3
100
101
VDS[V]
ID=f(VDS);TC=25°C;D=0;parameter:tp
102
10-4
103 100
101
VDS[V]
ID=f(VDS);TC=25°C;D=0;parameter:tp
102
103
Diagram7:Safeoperatingarea(NonFullPAK)
102
101 1 µs
10 µs
100 µs
1 ms
100
DC
10-1
10-2
Diagram8:Safeoperatingarea(FullPAK)
102
101 1 µs
10 µs
100 µs
100 1 ms
10 ms
DC
10-1
10-2
10-3
10-3
100
101
VDS[V]
ID=f(VDS);TC=80°C;D=0;parameter:tp
102
10-4
103 100
101
VDS[V]
ID=f(VDS);TC=80°C;D=0;parameter:tp
102
103
Final Data Sheet
8 Rev.2.2,2016-08-08







IPD60R650CE equivalent, schematic
600VCoolMOSªCEPowerTransistor
IPD60R650CE,IPA60R650CE
RevisionHistory
IPD60R650CE, IPA60R650CE
Revision:2016-08-08,Rev.2.2
Previous Revision
Revision Date
2.0 2014-09-25
2.1 2016-03-31
2.2 2016-08-08
Subjects (major changes since last revision)
Release of final version
Modified Id, Rthjc. Modified SOA and Zthjc curves
Added Full PAK marking on page 1, revised Full PAK package drawing on page 14 and
changed TO252 package solder reflow rating to MSL3 on page 4
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2016InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
16 Rev.2.2,2016-08-08










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