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零件编号 | 1SV322 | ||
描述 | TOSHIBA Diode Silicon Epitaxial Planar Type | ||
制造商 | Toshiba Semiconductor | ||
LOGO | |||
1 Page
TCXO/VCO
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV322
· High capacitance ratio: C1 V/C4 V = 4.3 (typ.)
· Low series resistance: rs = 0.4 Ω (typ.)
· Useful for small size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
VR
Tj
Tstg
Rating
10
125
-55~125
Unit
V
°C
°C
1SV322
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1 V
C4 V
C1 V/C4 V
rs
IR = 1 mA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
¾
VR = 4 V, f = 100 MHz
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
10 ¾ ¾
V
¾ ¾ 3 nA
26.5 ¾ 29.5 pF
6.0 ¾ 7.1 pF
4.0 4.3 ¾
¾
¾ 0.4 0.8 W
1 2003-03-24
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页数 | 3 页 | ||
下载 | [ 1SV322.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
1SV322 | TOSHIBA Diode Silicon Epitaxial Planar Type | Toshiba Semiconductor |
1SV323 | TOSHIBA Diode Silicon Epitaxial Planar Type TCXO/VCO | Toshiba Semiconductor |
1SV324 | Silicon Epitaxial Planar Type Diode | Toshiba Semiconductor |
1SV325 | TOSHIBA Diode Silicon Epitaxial Planar Type | Toshiba Semiconductor |
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