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PDF ( 数据手册 , 数据表 ) 1SV252

零件编号 1SV252
描述 DIODE (VHF~UHF BAND RF ATTENUATOR APPLICATIONS)
制造商 Toshiba Semiconductor
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1SV252 数据手册, 描述, 功能
TOSHIBA Diode Silicon Epitaxial Pin Type
1SV252
VHF~UHF Band RF Attenuator Applications
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
VR
IF
Tj
Tstg
Rating
50
50
125
-55~125
Unit
V
mA
°C
°C
1SV252
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Series resistance
VR IR = 10 mA
IR VR = 50 V
VF IF = 50 mA
(Note) CT VR = 50 V, f = 1 MHz
rs IF = 10 mA, f = 100 MHz
Note: CT is measured by 3 terminal method with capacitance bridge.
Marking
JEDEC
JEITA
SC-70
TOSHIBA
1-2P1C
Weight: 0.006 g (typ.)
Min Typ. Max Unit
50 ¾ ¾
V
¾ ¾ 0.1 mA
¾ 0.93 0.98
V
¾ 0.2 0.4 pF
¾ 3.5 10
W
1 2003-03-24












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