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PDF ( 数据手册 , 数据表 ) PMPB85ENEA

零件编号 PMPB85ENEA
描述 single N-channel Trench MOSFET
制造商 NXP Semiconductors
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PMPB85ENEA 数据手册, 描述, 功能
PMPB85ENEA
60 V, single N-channel Trench MOSFET
19 December 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
AEC-Q101 qualified
3. Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 3 A; Tj = 25 °C
Min Typ Max Unit
- - 60 V
-20 -
20 V
[1] - - 4.4 A
- 72 95 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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PMPB85ENEA pdf, 数据表
NXP Semiconductors
12
ID
(A)
8
aaa-008605
PMPB85ENEA
60 V, single N-channel Trench MOSFET
2.1
a
1.6
aaa-008606
Tj = 150 °C
4
1.1
Tj = 25 °C
0
012
VDS > ID × RDSon
34
VGS (V)
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.6
-60 0 60 120 180
Tj (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
3
VGS(th)
(V)
2
1
max
aaa-008607
typ
min
103
C
(pF)
102
10
aaa-008608
Ciss
Coss
Crss
0
-60 0 60
ID = 0.25 mA; VDS = VGS
120 180
Tj (°C)
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
1
10-1
1
f = 1 MHz; VGS = 0 V
10 102
VDS (V)
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMPB85ENEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 December 2013
© NXP N.V. 2013. All rights reserved
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