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PDF ( 数据手册 , 数据表 ) MMSF7N03Z

零件编号 MMSF7N03Z
描述 Power MOSFET ( Transistor )
制造商 ON Semiconductor
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MMSF7N03Z 数据手册, 描述, 功能
MMSF7N03Z
Power MOSFET
7 Amps, 30 Volts
NChannel SO8
EZFETst are an advanced series of Power MOSFETs which contain
monolithic backtoback zener diodes. These zener diodes provide
protection against ESD and unexpected transients. These miniature
surface mount MOSFETs feature ultra low RDS(on) and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the draintosource diode has a
very low reverse recovery time. EZFET devices are designed for use in
low voltage, high speed switching applications where power efficiency is
important. Typical applications are dcdc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives.
Zener Protected Gates Provide Electrostatic Discharge Protection
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
Designed to withstand 200V Machine Model and 2000V Human
Body Model
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO8 Package Provided
http://onsemi.com
7 AMPERES
30 VOLTS
RDS(on) = 30 mW
NChannel
D
G
S
MARKING
DIAGRAM
SO8
8
CASE 751
STYLE 12
1
7N03Z
LYWW
7N03Z
L
Y
WW
= Device Code
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
Source
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Device
Package
Shipping
MMSF7N03ZR2
SO8 2500 Tape & Reel
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
Publication Order Number:
MMSF7N03Z/D







MMSF7N03Z pdf, 数据表
MMSF7N03Z
100
VGS = 15 V
SINGLE PULSE
TC = 25°C
10
1
100 μs
1 ms
10 ms
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
500
ID = 15 A
400
300
200
100
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
TYPICAL ELECTRICAL CHARACTERISTICS
10
1 D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.001
1.0E−05
SINGLE PULSE
1.0E−04
1.0E−03
Normalized to θja at 10s.
Chip 0.0163 Ω 0.0652 Ω 0.1988 Ω 0.6411 Ω 0.9502 Ω
0.0307 F 0.1668 F
0.5541 F 1.9437 F
72.416 F Ambient
1.0E−02
1.0E−01
1.0E+00
t, TIME (s)
Figure 14. Thermal Response
1.0E+01
1.0E+02
1.0E+03
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 15. Diode Reverse Recovery Waveform
http://onsemi.com
8














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