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PDF ( 数据手册 , 数据表 ) MMSF3350

零件编号 MMSF3350
描述 Single N-Channel Field Effect Transistor
制造商 ON Semiconductor
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MMSF3350 数据手册, 描述, 功能
MMSF3350
WaveFETHDTMOS
Single N−Channel Field
Effect Transistor
Power Surface Mount Products
WaveFET devices are an advanced series of power MOSFETs
which utilize ON Semiconductor’s latest MOSFET technology
process to achieve the lowest possible onresistance per silicon area.
They are capable of withstanding high energy in the avalanche and
commutation modes and the draintosource diode has a very low
reverse recovery time. WaveFET devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are dcdc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage
transients.
Characterized Over a Wide Range of Power Ratings
Ultralow RDS(on) Provides Higher Efficiency and
Extends Battery Life in Portable Applications
Logic Level Gate Drive Can Be Driven by
Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Miniature SO8 Surface Mount Package Saves Board Space
http://onsemi.com
SINGLE TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 11 mW
D
G
S
SO8
CASE 751
Style 12
MARKING
DIAGRAM
8
XXXXXX
ALYW
1
XXX
A
L
Y
W
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 3
1
Publication Order Number:
MMSF3350/D







MMSF3350 pdf, 数据表
MMSF3350
100
10
dc
1
10 ms
1 ms 100 ms
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1 10
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
100
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
1000
900 ID = 10 A
800
700
600
500
400
300
200
100
0
25
50 75 100 125 15
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
http://onsemi.com
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