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零件编号 | MMSF3350 | ||
描述 | Single N-Channel Field Effect Transistor | ||
制造商 | ON Semiconductor | ||
LOGO | |||
1 Page
MMSF3350
WaveFET™ HDTMOS™
Single N−Channel Field
Effect Transistor
Power Surface Mount Products
WaveFET devices are an advanced series of power MOSFETs
which utilize ON Semiconductor’s latest MOSFET technology
process to achieve the lowest possible on−resistance per silicon area.
They are capable of withstanding high energy in the avalanche and
commutation modes and the drain−to−source diode has a very low
reverse recovery time. WaveFET devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are dc−dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage
transients.
• Characterized Over a Wide Range of Power Ratings
• Ultralow RDS(on) Provides Higher Efficiency and
Extends Battery Life in Portable Applications
• Logic Level Gate Drive − Can Be Driven by
Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Miniature SO−8 Surface Mount Package − Saves Board Space
http://onsemi.com
SINGLE TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 11 mW
D
G
S
SO−8
CASE 751
Style 12
MARKING
DIAGRAM
8
XXXXXX
ALYW
1
XXX
A
L
Y
W
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
1
Publication Order Number:
MMSF3350/D
MMSF3350
100
10
dc
1
10 ms
1 ms 100 ms
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
1000
900 ID = 10 A
800
700
600
500
400
300
200
100
0
25
50 75 100 125 15
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
http://onsemi.com
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页数 | 12 页 | ||
下载 | [ MMSF3350.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
MMSF3350 | Single N-Channel Field Effect Transistor | ON Semiconductor |
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